Sic

O Combo-FET UG4SC075009K4S da Qorvo integra um JFET SiC de 750 V e um MOSFET Si de baixa tensão num único encapsulamento TO-247-4L. ^[1]

This study provides a reference for the entire process of the U-shaped assembly-line, type-E balance and the assembly products in laboratories. ^[2]

A LA-based band consisting of members who perform with some of the most premier ensembles including major motion picture and television shows. ^[3]

The results show that, the reinforcement of the metal matrix with SiC and TiO2 reduces the wear rate at room temperature. [4]